发明名称 Three-Dimensional Offset-Printed Memory
摘要 The present invention discloses a three-dimensional offset-printed memory (3D-oP). Compared with a conventional three-dimensional mask-programmed read-only memory (3D-MPROM), it has a lower data-mask count and thereby a lower data-mask cost. The mask-patterns for different memory levels/bits-in-a-cell are merged onto a multi-region data-mask. At different printing steps, a wafer is offset by different values with respect to said data-mask. Accordingly, data-patterns are printed into different memory levels/bits-in-a-cell from a same data-mask.
申请公布号 US2013058146(A1) 申请公布日期 2013.03.07
申请号 US201213599085 申请日期 2012.08.30
申请人 ZHANG GUOBIAO;CHENGDU HAICUN IP TECHNOLOGY LLC 发明人 ZHANG GUOBIAO
分类号 G11C5/02;H01L21/50 主分类号 G11C5/02
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