| 摘要 |
PURPOSE: A GaN LED and a rapid thermal annealing method thereof are provided to obtain high efficiency by reducing a serial resistance and a turn-on voltage. CONSTITUTION: A p-GaN multilayer structure(30) including a p-GaN layer(50) and an n-GaN layer(40) is formed on a substrate(20). A rapid thermal annealing process is performed on the p-GaN layer. A transparent conductive layer is formed on the GaN multilayer structure. A p-contact(90p) is added to the transparent conductive layer. An n-contact(90n) is added to the n-GaN layer. The rapid thermal annealing process is performed for 10 seconds or less.
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