| 摘要 |
PURPOSE: A method for manufacturing a nitride substrate is provided to prevent defects from being spread from a bottom layer to a top layer by epitaxially growing a nitride layer after an etch gas is sprayed on the nitride layer and the nitride layer is etched. CONSTITUTION: A first nitride layer(2) is formed on a sapphire substrate(1). An uneven part is formed on the surface of the first nitride layer by spraying an etch gas including silicon to the first nitride layer. A low temperature GaN based buffer layer(3) is epitaxially grown on the upper side of the first nitride layer. A high temperature GaN layer(4) is formed on the low temperature GaN based buffer layer. An n-type nitride layer(5) is formed on the high temperature GaN layer. An active layer(6) is formed on the n-type nitride layer. A p-type nitride layer(7) is formed on the active layer.
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