| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve high breakdown voltage and reduction of ON state voltage of a semiconductor device at the same time. <P>SOLUTION: A semiconductor device comprises: an n-type semiconductor substrate 1: a p-type channel region 4; and a junction layer provided between the n-type semiconductor substrate 1 and the p-type channel region 4 where an n-type drain region 2 and a p-type partitioning region 3 are arranged alternately in a direction in parallel with a main surface of the n-type semiconductor substrate 1. Impurity concentration of the p-type partitioning region 3 for composing the junction layer is higher than the impurity concentration of an n-type drift region 2. <P>COPYRIGHT: (C)2013,JPO&INPIT |
