NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A nitride semiconductor light emitting device and a manufacturing method thereof are provided to prevent the deterioration of a bandgap of a first conductive nitride semiconductor layer by doping an In doping layer of the first conductive nitride semiconductor layer with silicon. CONSTITUTION: A buffer layer(120) is formed on a substrate(110). A first conductive nitride semiconductor layer(130) is formed on the buffer layer. The first conductive semiconductor layer is formed by alternatively laminating an In doping layer and a silicon doping layer. An active layer(140) is formed on the first conductive nitride semiconductor layer. A second conductive nitride semiconductor layer(150) is formed on the active layer. A first electrode(160) is formed in one area of the first conductive nitride semiconductor layer. A second electrode(170) is formed in one area of the second conductive nitride semiconductor layer.