| 发明名称 |
METHOD FOR FORMING HAFNIUM THIN FILM AND HAFNIUM THIN FILM-FORMING MATERIAL |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a compound which is in a liquid state at room temperature and has excellent stability, and to provide a technique for stably forming a high-quality hafnium thin film for which a raw material can be stably supplied. <P>SOLUTION: A hafnium thin film-forming material is composed of the compound represented by following general formula [I]: LHf(NR<SP POS="POST">1</SP>R<SP POS="POST">2</SP>)<SB POS="POST">3</SB>, wherein L represents a substituted cyclopentadienyl group, and R<SP POS="POST">1</SP>and R<SP POS="POST">2</SP>each represent an alkyl group, and may be the same as or different from each other. <P>COPYRIGHT: (C)2013,JPO&INPIT |
| 申请公布号 |
JP2013047391(A) |
申请公布日期 |
2013.03.07 |
| 申请号 |
JP20120219892 |
申请日期 |
2012.10.01 |
| 申请人 |
TRI CHEMICAL LABORATORY INC;TECHNO SEMICHEM CO LTD |
发明人 |
HIRAKI TADAAKI;MIHASHI SATOSHI;FUTOTSUKE SEI;TSUBAKITANI AKIHITO;KIM BYUNG-SOO;YOO SEUNG HO |
| 分类号 |
C23C16/18;H01L21/28;H01L21/285 |
主分类号 |
C23C16/18 |
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