| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SiC semiconductor element reduced in carrier trapping centers. <P>SOLUTION: An SiC bipolar type semiconductor element includes: an n type or p type SiC substrate 11; and at least one n type or p type SiC epitaxial layer 12 or at least one n type or p type ion implantation layer 14. The SiC bipolar type semiconductor element further includes: a carbon implantation layer, a silicon implantation layer, a hydrogen implantation layer or a helium implantation layer in at least one region 100 among regions around an SiC substrate surface, around an interface between the SiC substrate and the SiC epitaxial layer, and around an SiC epitaxial layer surface, excluding around a pn junction interface and within a conductivity modulation layer (base layer); and a region within the conductivity modulation layer, the region being reduced in electrically active point defects by bonding carbon interstitial atoms and the point defects while diffusing the carbon interstitial atoms into the conductivity modulation layer by annealing, the carbon interstitial atoms being introduced by carrying out ion implantation of carbon atoms, silicon atoms, hydrogen atoms, or helium atoms. <P>COPYRIGHT: (C)2013,JPO&INPIT |
