METHOD FOR FORMING OXIDE FILM BY PLASMA ELECTROLYTIC OXIDATION

摘要

A method for forming an oxide film by plasma electrolytic oxidation includes a first step of placing an anode, which is a substrate with a conductive nitride film, and a cathode into an electrolyte of which the temperature range is from 20° C. to 100° C., and a second step of applying a voltage ranging from 50 V to 1000 V to the anode and cathode to finally form an oxide film on a surface of the conductive nitride film of the anode. The oxide film can be formed more rapidly than the prior art and has excellent crystallinity.