| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a ferromagnetic tunnel junction element capable of reducing a current value required for writing even in a magnetic field writing MRAM and spin torque transfer magnetization switching MRAM. <P>SOLUTION: A ferromagnetic tunnel junction element 1 has a structure where a ferromagnetic free layer 2 consisting of a plurality of layers including a ferromagnetic layer, an insulation layer 3, and a ferromagnetic fixed layer 4 consisting of a plurality of layers including a ferromagnetic layer are laminated in order. The ferromagnetic free layer 2 contains an additive element, that serves to reduce saturation magnetization of the ferromagnetic free layer 2, more on the side not in contact with the insulation layer 3 than on the side in contact with the insulation layer 3. <P>COPYRIGHT: (C)2013,JPO&INPIT |
