| 摘要 |
Provided are: a piezoelectric bulk wave device that uses an LiTaO3 thickness shear mode and has little variation in electrical properties caused by variation in electrode film thickness or LiTaO3 thickness; and a production method therefor. The piezoelectric bulk wave device (1) comprises a piezoelectric thin plate (5) comprising LiTaO3, and first and second electrodes (6, 7) disposed so as to come in contact with the piezoelectric thin plate (5); and uses a thickness shear mode for the piezoelectric thin plate (5) comprising LiTaO3. The first and second electrodes (6, 7) comprise a conductor having a specific acoustic impedance greater than the specific acoustic impedance of transverse waves that propagate the LiTaO3, and the piezoelectric bulk wave device has an electrode thickness/(electrode thickness + LT thickness) of 40%-95%, when the sum of the film thickness of the first and second electrodes (6, 7) is electrode thickness and the thickness of the piezoelectric thin plate (5) comprising LiTaO3 is LT thickness. |
