SEMICONDUCTOR DEVICE WITH BURIED GATE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device including a buried gate and a manufacturing method thereof are provided to prevent a short between adjacent storage node contact plugs by a sufficient over-etching process in forming a damascene pattern. CONSTITUTION: A device isolation layer(32) is formed on a substrate(31) and defines a plurality of active regions. An etch preventing layer(38) fills a recess pattern formed on the device isolation layer. An interlayer dielectric layer(39) is formed on the substrate. A damascene pattern(42) is formed on the interlayer dielectric layer. A bit line(44) is formed in the damascene pattern. A storage node contact plug(41A) is separated by the damascene pattern.