| 摘要 |
PURPOSE: A post-ash sidewall healing method is provided to reduce an average dielectric constant of a low-k dielectric material by removing an external dielectric layer from the low-k dielectric material. CONSTITUTION: A process chamber(300) includes a chamber body(312), a lead assembly(302), and a support assembly(310). The chamber body includes a slit valve opening(360) to access the process chamber. The chamber body includes a chamber body channel(313) to move thermal transfer fluid. A throttle valve(327) and a vacuum pump(325) control the flow of gases via the process chamber. A process region(340) is limited by the upper surface of the support assembly and the lower surface of the lead assembly. A support assembly channel(304) is formed in the support assembly to smoothly transmit thermal energy.
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