发明名称 |
METHOD OF OPERATING PHASE-CHANGE MEMORY |
摘要 |
One or more embodiments may be related to a method of operating a phase-change memory element, comprising: providing the phase-change memory element, the phase-change memory element having a first terminal and a second terminal; causing a first current through the memory element from the first terminal to the second terminal; and causing a second current through the memory element from the second terminal to the first terminal, wherein the causing the first current programs the memory element from a first resistance state to a second resistance state and the causing the second current programs the memory element from the first resistance state to the second resistance state. |
申请公布号 |
US2013058159(A1) |
申请公布日期 |
2013.03.07 |
申请号 |
US201213402895 |
申请日期 |
2012.02.23 |
申请人 |
OTTERSTEDT JAN;NIRSCHL THOMAS;PETERS CHRISTIAN;BOLLU MICHAEL;ALLERS WOLF;SOMMER MICHAEL |
发明人 |
OTTERSTEDT JAN;NIRSCHL THOMAS;PETERS CHRISTIAN;BOLLU MICHAEL;ALLERS WOLF;SOMMER MICHAEL |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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