发明名称 SINGLE CRYSTAL SILICON WAFER AND A FABRICATION METHOD THEREOF
摘要 The present invention relates to a single crystal silicon wafer and a fabrication method thereof, and more specifically to: a crystalline silicon wafer which can further increase light efficiency by maximizing the quantity of light absorption and remarkably lowering light reflectance since the crystalline silicon wafer is configured to have a surface consisting of a plurality of pyramids in which a lateral side leading from one apex to the bottom is curved; and a fabrication method thereof.
申请公布号 WO2012169788(A3) 申请公布日期 2013.03.07
申请号 WO2012KR04479 申请日期 2012.06.07
申请人 DONGWOO FINE-CHEM CO., LTD.;LEE, JAE YOUN;PARK, MYUN KYU;HONG, HYUNG PYO;JIN, YOUNG JUN 发明人 LEE, JAE YOUN;PARK, MYUN KYU;HONG, HYUNG PYO;JIN, YOUNG JUN
分类号 H01L31/042;H01L31/0236;H01L31/18 主分类号 H01L31/042
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