SINGLE CRYSTAL SILICON WAFER AND A FABRICATION METHOD THEREOF
摘要
The present invention relates to a single crystal silicon wafer and a fabrication method thereof, and more specifically to: a crystalline silicon wafer which can further increase light efficiency by maximizing the quantity of light absorption and remarkably lowering light reflectance since the crystalline silicon wafer is configured to have a surface consisting of a plurality of pyramids in which a lateral side leading from one apex to the bottom is curved; and a fabrication method thereof.
申请公布号
WO2012169788(A3)
申请公布日期
2013.03.07
申请号
WO2012KR04479
申请日期
2012.06.07
申请人
DONGWOO FINE-CHEM CO., LTD.;LEE, JAE YOUN;PARK, MYUN KYU;HONG, HYUNG PYO;JIN, YOUNG JUN
发明人
LEE, JAE YOUN;PARK, MYUN KYU;HONG, HYUNG PYO;JIN, YOUNG JUN