| 摘要 |
A flash memory having a three-dimensional structure and using a fringing effect, and a method for manufacturing same are disclosed. A through-hole, which penetrates through a plurality of gate electrodes that are perpendicularly stacked, is formed on a substrate, and the inside of the through-hole is filled with a tunneling insulation membrane or an activated region. As a result, a charge storage layer is not formed inside the through-hole but is formed outside the through-hole. The charge storage layer is formed inside an inter-cell insulation membrane that fills a separated space between the gate electrodes. When a fringing field is applied, charge in the activated region is trapped in the charge storage field by means of the inter-cell insulation membrane. |
