发明名称 |
METHOD FOR FORMING FERRITE FILM ON SURFACE OF PLANT COMPONENT, AND FERRITE FILM-FORMING APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming a ferrite film on the surface of a plant component by which the time required for the completion of ferrite film-forming work can be reduced. <P>SOLUTION: A film-forming apparatus is connected to recirculation system piping of a BWR plant which is a plant component (S1). An aqueous film-forming solution containing a pH adjuster, a chemical containing iron (II) ions, and an oxidizing agent is supplied to the recirculation system piping from the film-forming apparatus (S4-S6). A ferrite film is formed on the inner surface of the recirculation system piping in contact with the aqueous film-forming solution. The amount of the ferrite film formed is measured by a quartz resonator electrode device arranged in film-forming solution piping of the film-forming apparatus for supplying the aqueous film-forming solution (S7). A film-forming rate is determined based on the amount of ferrite film measured, and the amount of each chemical to be injected is controlled based on the film-forming rate (S10). It is determined whether the thickness of the ferrite film obtained based on the amount of the ferrite film measured is equal to a set thickness (S8). When the thickness of the film is equal to the set thickness, the ferrite film-forming work is completed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013047394(A) |
申请公布日期 |
2013.03.07 |
申请号 |
JP20120243444 |
申请日期 |
2012.11.05 |
申请人 |
HITACHI-GE NUCLEAR ENERGY LTD |
发明人 |
ITO TAKESHI;HOSOKAWA HIDEYUKI;HIRAMA YUKIO;NAGASE MAKOTO |
分类号 |
C23C26/00;C01G49/08;C23F15/00;G21C19/307;G21D1/00 |
主分类号 |
C23C26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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