发明名称 |
SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, ELECTRONIC DEVICE, AND METHOD OF PRODUCING ELECTRONIC DEVICE |
摘要 |
A semiconductor wafer includes a base wafer, a first semiconductor portion that is formed on the base wafer and includes a first channel layer containing a majority carrier of a first conductivity type, a separation layer that is formed over the first semiconductor portion and contains an impurity to create an impurity level deeper than the impurity level of the first semiconductor portion, and a second semiconductor portion that is formed over the separation layer and includes a second channel layer containing a majority carrier of a second conductivity type opposite to the first conductivity type.
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申请公布号 |
US2013056794(A1) |
申请公布日期 |
2013.03.07 |
申请号 |
US201213664360 |
申请日期 |
2012.10.30 |
申请人 |
SUMITOMO CHEMICAL COMPANY, LIMITED;SUMITOMO CHEMICAL COMPANY, LIMITED |
发明人 |
NISHIKAWA NAOHIRO;NAKANO TSUYOSHI;INOUE TAKAYUKI |
分类号 |
H01L29/778;H01L21/20;H01L21/338 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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