发明名称 SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, ELECTRONIC DEVICE, AND METHOD OF PRODUCING ELECTRONIC DEVICE
摘要 A semiconductor wafer includes a base wafer, a first semiconductor portion that is formed on the base wafer and includes a first channel layer containing a majority carrier of a first conductivity type, a separation layer that is formed over the first semiconductor portion and contains an impurity to create an impurity level deeper than the impurity level of the first semiconductor portion, and a second semiconductor portion that is formed over the separation layer and includes a second channel layer containing a majority carrier of a second conductivity type opposite to the first conductivity type.
申请公布号 US2013056794(A1) 申请公布日期 2013.03.07
申请号 US201213664360 申请日期 2012.10.30
申请人 SUMITOMO CHEMICAL COMPANY, LIMITED;SUMITOMO CHEMICAL COMPANY, LIMITED 发明人 NISHIKAWA NAOHIRO;NAKANO TSUYOSHI;INOUE TAKAYUKI
分类号 H01L29/778;H01L21/20;H01L21/338 主分类号 H01L29/778
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