发明名称 ABNORMALITY DETECTING UNIT AND ABNORMALITY DETECTING METHOD
摘要 An abnormality detecting unit includes a monitoring unit for monitoring an operation from a wafer deviation starting point to a transfer gate valve opening point after performing a plasma process on the wafer and specifying the operation as a wafer deviation operation; an acquisition unit for acquiring a high frequency signal of at least one of a progressive wave and a reflection wave outputted from a directional coupler between a high frequency power supply for applying a high frequency power into a processing chamber and a matching unit or between a lower electrode as a mounting table for mounting thereon the wafer and the matching unit during the wafer deviation operation; an analysis unit for analyzing a waveform pattern of the high frequency signal; and an abnormality determination unit for determining whether there is an abnormal electric discharge based on an analysis result of the waveform pattern.
申请公布号 US2013056154(A1) 申请公布日期 2013.03.07
申请号 US201213534594 申请日期 2012.06.27
申请人 NAKAYA MICHIKO;OMINE HARUKI;TSUNAMOTO TETSU;NAGAIKE HIROSHI;TOKYO ELECTRON LIMITED 发明人 NAKAYA MICHIKO;OMINE HARUKI;TSUNAMOTO TETSU;NAGAIKE HIROSHI
分类号 G01R31/26;C23F1/08 主分类号 G01R31/26
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