发明名称 |
FinFET Design Controlling Channel Thickness |
摘要 |
System and method for controlling the channel thickness and preventing variations due to formation of small features. An embodiment comprises a fin raised above the substrate and a capping layer is formed over the fin. The channel carriers are repelled from the heavily doped fin and confined within the capping layer. This forms a thin-channel that allows greater electrostatic control of the gate. |
申请公布号 |
US2013056795(A1) |
申请公布日期 |
2013.03.07 |
申请号 |
US201113335689 |
申请日期 |
2011.12.22 |
申请人 |
WU ZHIQIANG;GOTO KEN-ICHI;HSIEH WEN-HSING;HO JON-HSU;WANG CHIH-CHING;HUANG CHING-FANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WU ZHIQIANG;GOTO KEN-ICHI;HSIEH WEN-HSING;HO JON-HSU;WANG CHIH-CHING;HUANG CHING-FANG |
分类号 |
H01L29/78;H01L21/20;H01L29/12;H01L29/36 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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