| 发明名称 |
METHOD OF FABRICATING SILICON CARBIDE |
| 摘要 |
A method of fabricating silicon carbide according to the embodiment comprises the steps of preparing a mixture by mixing a dry silicon source with a carbon source comprising an organic carbon compound; and reacting the mixture, wherein a viscosity of the carbon source is in a range of 20 cps to 1000 cps. |
| 申请公布号 |
WO2013019068(A3) |
申请公布日期 |
2013.03.07 |
| 申请号 |
WO2012KR06123 |
申请日期 |
2012.08.01 |
| 申请人 |
LG INNOTEK CO., LTD.;HAN, JUNG EUN;KIM, BYUNG SOOK |
发明人 |
HAN, JUNG EUN;KIM, BYUNG SOOK |
| 分类号 |
C01B31/36;B01F3/18;B01J6/00 |
主分类号 |
C01B31/36 |
| 代理机构 |
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