| 摘要 |
PURPOSE: A method for filling a trench and a method for manufacturing a semiconductor integrated circuit device are provided to prevent the deterioration of an insulation property in a device isolation region by filling the trench with an SOD(Spin-On Dielectric) method and reforming an SOD layer. CONSTITUTION: A trench is formed around a main surface of a semiconductor substrate(1). A silicon oxide liner is formed on the semiconductor substrate with the trench(2). An oxide barrier layer is formed on the silicon oxide liner(3). A silicon liner is formed on the oxide barrier layer(4). A narrow part of the trench is filled with a first filling material(5). A wide part of the trench is filled with a second filling material(6). The second filling material is reformed and the silicon liner is oxidized(7). [Reference numerals] (AA) Start; (BB) Forming a trench; (CC) Step 1; (DD) Forming a silicon oxide liner; (EE) Step 2; (FF) Forming an oxide barrier layer; (GG) Step 3; (HH) Forming a silicon liner; (II) Step 4; (JJ) Filling a narrow part of the trench with a first filling material; (KK) Step 5; (LL) Filling a wide part of the trench with a second filling material; (MM) Step 6; (NN) Reforming the second filling material and oxidizing the silicon liner; (OO) Step 7; (PP) End
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