| 摘要 |
PURPOSE: A solid state imaging device, a manufacturing method thereof, and an electronic device are provided to suppress a potential variation on a substrate surface in a source side of an amplification gate electrode by forming a low density impurity region under a sidewall of a source side of an amplification transistor. CONSTITUTION: A reset transistor is composed of a reset gate electrode(21) formed on a semiconductor substrate(41), a source region(25), and a drain region(27) formed in a substrate region to which the reset gate electrode is fitted. An amplification transistor is composed of an amplification gate electrode(22) formed on the upper side of the semiconductor substrate, a source region(32), and a drain region(38) formed in the substrate region to which the amplification gate electrode is fitted. The source region of the amplification transistor is composed of a low density impurity region(29) and a high density impurity region(30). The drain region of the amplification transistor is composed of the drain region of the reset transistor and a common high density impurity region(28). A selection transistor is composed of a selection gate electrode(23), a source region(36), and a drain region(33) formed in a semiconductor region to which the selection gate electrode is fitted.
|
