发明名称 |
METHOD OF PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL INGOT, AND SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide: a method of producing a silicon carbide single crystal from which a silicon carbide single crystal substrate having little basal-plane dislocation and excellent in crystallinity can be obtained; a silicon carbide single crystal ingot thus obtained by the method; and the silicon carbide single crystal substrate obtained from the ingot. <P>SOLUTION: This invention relates to: the method of producing the high-quality silicon carbide single crystal that has little basal-plane dislocation, wherein the basal-plane dislocation is reduced by structurally converting the basal-plane dislocation into a threading edge dislocation during the crystal growing through a sublimation recyrstallization method; the silicon carbide single crystal ingot obtained by the method; and the silicon carbide single crystal substrate obtained from the ingot. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013047159(A) |
申请公布日期 |
2013.03.07 |
申请号 |
JP20110186122 |
申请日期 |
2011.08.29 |
申请人 |
NIPPON STEEL & SUMITOMO METAL CORP |
发明人 |
SATO SHINYA;FUJIMOTO TATSUO;TSUGE HIROSHI;KATSUNO MASAKAZU |
分类号 |
C30B29/36;C30B23/06;H01L21/203 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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