| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor using an oxide semiconductor layer, which reduces contact resistance with a source electrode layer or a drain electrode layer which is electrically connected with the oxide semiconductor layer. <P>SOLUTION: A semiconductor device comprises a lamination structure of more than one layer of source electrode layers or drain electrode layers, in which one layer 104a, 104b contacting an oxide semiconductor layer is a thin indium layer or a thin indium alloy layer. An oxide semiconductor layer 103 contains indium. For a source electrode layer 105a or a drain electrode layer 105b above the second layer, a material such as an element selected from Al, Cr, Cu, Ta, Ti, Mo and W, an alloy containing the above-described elements and an alloy combining the above-described elements is used. <P>COPYRIGHT: (C)2013,JPO&INPIT |
