SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the oxidation of a substrate and stress between the substrate and gap-filling materials by laminating a sidewall oxide layer and a liner oxide layer using a step of a trench before a protection layer is formed. CONSTITUTION: A first trench defining an active region(100) is formed on a substrate(11). A second trench is formed in a peripheral region of the substrate. A lateral oxide layer(15) and a liner oxide layer(16) are laminated on the bottom sides, and sidewalls of the first and second trenches. A protection layer(17) filling the first trench is formed on the liner oxide layer of the first trench. An insulation layer(18) is formed to fill the remaining part of the second trench on the protection layer. A recess pattern is formed in a cell region by etching the substrate between the first trenches. A buried gate is formed to fill a part of the recess pattern. [Reference numerals] (AA) Cell region; (BB) Peripheral region