BIT LINE IN SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A bit line of a semiconductor device and a manufacturing method thereof are provided to secure a sufficient distance between the bit line and a storage node contact plug by additionally forming a spacer with a lower dielectric constant than a nitride layer except a spacer film between the bit line and the storage node contact. CONSTITUTION: A junction area is formed on both substrates(11) of a buried gate(15) and is classified into a storage contact node and a bit line contact node. An open part simultaneously opens the adjacent storage contact node. An undoped silicon containing layer(22) fills the open part on the storage node contact. A damascene pattern exposes the bit line contact node. A spacer film(25) is formed on a sidewall of the damascene pattern. A bit line(26) fills a part of the damascene pattern.