SEMICONDUCTOR DEVICE WITH AIR GAP SPACER AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device including an air gap spacer and a manufacturing method thereof are provided to reduce parasitic capacitance between a bit line and a storage node contact plug by forming an air gap between the bit line and the storage node contact plug. CONSTITUTION: A device isolation layer(22) is formed on a semiconductor substrate(21). A plurality of active regions(23) include a bit line contact region and a storage node contact region. A storage node contact plug(29A,29B) is formed on the storage node contact region. A bit line(36) separates the storage node contact plug. An air gap(38) and a bit line spacer(35) are formed between the bit line and the storage node contact plug. A bit line hard mask layer(37) is formed on the bit line.