发明名称 |
SEMICONDUCTOR DEVICE HAVING SCHOTTKY DIODE STRUCTURE |
摘要 |
A semiconductor device including a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) generated within the semiconductor layer; a plurality of first ohmic electrodes which are disposed on the central region of the semiconductor layer and have island-shaped cross sections; a second ohmic electrode which is disposed on edge regions of the semiconductor layer; and a Schottky electrode part has first bonding portions bonded to the first ohmic electrodes, and a second bonding portion bonded to the semiconductor layer. A depletion region is provided to be spaced apart from the 2DEG when the semiconductor device is driven at an on-voltage and is provided to be expanded to the 2DEG when the semiconductor device is driven at an off-voltage, the depletion region being generated within the semiconductor layer by bonding the semiconductor layer and the second bonding portion.
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申请公布号 |
US2013056797(A1) |
申请公布日期 |
2013.03.07 |
申请号 |
US201213666393 |
申请日期 |
2012.11.01 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD.;SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
JEON WOO CUL;LEE JUNG HEE;PARK YOUNG HWAN;PARK KI YEOL |
分类号 |
H01L29/778 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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