发明名称 MASK BLANK, TRANSFER MASK AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES
摘要 The present invention is the mask blank includes a glass substrate and a thin film formed on a main surface of the glass substrate, the thin film includes a material containing tantalum and substantially no hydrogen, and the mask blank has a invasion suppressive film between the main surface of the glass substrate and the thin film which suppresses hydrogen from being invaded from the glass substrate into the thin film.
申请公布号 US2013059236(A1) 申请公布日期 2013.03.07
申请号 US201213605125 申请日期 2012.09.06
申请人 SHISHIDO HIROAKI;NOZAWA OSAMU;KOMINATO ATSUSHI;HOYA CORPORATION 发明人 SHISHIDO HIROAKI;NOZAWA OSAMU;KOMINATO ATSUSHI
分类号 G03F1/00;B32B17/06;G03F7/20 主分类号 G03F1/00
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