发明名称 |
MASK BLANK, TRANSFER MASK AND PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES |
摘要 |
The present invention is the mask blank includes a glass substrate and a thin film formed on a main surface of the glass substrate, the thin film includes a material containing tantalum and substantially no hydrogen, and the mask blank has a invasion suppressive film between the main surface of the glass substrate and the thin film which suppresses hydrogen from being invaded from the glass substrate into the thin film.
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申请公布号 |
US2013059236(A1) |
申请公布日期 |
2013.03.07 |
申请号 |
US201213605125 |
申请日期 |
2012.09.06 |
申请人 |
SHISHIDO HIROAKI;NOZAWA OSAMU;KOMINATO ATSUSHI;HOYA CORPORATION |
发明人 |
SHISHIDO HIROAKI;NOZAWA OSAMU;KOMINATO ATSUSHI |
分类号 |
G03F1/00;B32B17/06;G03F7/20 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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