发明名称 Thermally Enhanced Structure for Multi-Chip Device
摘要 A multi-chip semiconductor device comprises a thermally enhanced structure, a first semiconductor chip, a second semiconductor chip, an encapsulation layer formed on top of the first semiconductor chip and the second semiconductor chip. The multi-chip semiconductor device further comprises a plurality of thermal vias formed in the encapsulation layer. The thermally enhanced structure comprises a heat sink block attached to a first semiconductor die. The heat sink block may further comprise a variety of thermal vias and thermal openings. By employing the thermal enhanced structure, the thermal performance of the multi-chip semiconductor device can be improved.
申请公布号 US2013056871(A1) 申请公布日期 2013.03.07
申请号 US201113224487 申请日期 2011.09.02
申请人 YU CHEN-HUA;TUNG CHIH-HANG;SHAO TUNG-LIANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 YU CHEN-HUA;TUNG CHIH-HANG;SHAO TUNG-LIANG
分类号 H01L23/498;H01L21/60 主分类号 H01L23/498
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