发明名称 |
OXIDE REMOVAL FROM SEMICONDUCTOR SURFACES |
摘要 |
A method of removing at least one oxide from a surface of a body of semiconductor material is disclosed, the method comprising: arranging the body in a vacuum chamber; and maintaining a temperature of the body in the vacuum chamber within a predetermined range, or substantially at a predetermined value, while exposing said surface to a flux of indium atoms. Corresponding methods of processing an oxidised surface of a body of semiconductor material to prepare the surface for epitaxial growth of at least one epitaxial layer or film over said surface, and methods of manufacturing a semiconductor device are also disclosed. |
申请公布号 |
WO2012123741(A3) |
申请公布日期 |
2013.03.07 |
申请号 |
WO2012GB50560 |
申请日期 |
2012.03.14 |
申请人 |
UNIVERSITY OF LEEDS;LI, LIANHE;DAVIES, ALEXANDER;LINFIELD, EDMUND |
发明人 |
LI, LIANHE;DAVIES, ALEXANDER;LINFIELD, EDMUND |
分类号 |
H01L21/02;H01L21/20;H01L21/306 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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