| 摘要 |
<p>This semiconductor device manufacturing method includes: a step (S12) of disposing, at intervals larger than those at bonding, second substrates on supporting tables; a step (S13) of disposing the supporting tables at bonding positions by moving the supporting tables; and a step (S15) of pushing up the second substrates from the supporting tables, and bonding the second substrates to a first substrate held above the second substrates. Consequently, the intervals at which the second substrates are bonded on the first substrate can be made smaller than the conventional intervals, and use efficiency of the first substrate is improved.</p> |
