发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE
摘要 <p>A thin film transistor array substrate, including a plurality of scanning lines (120), data lines (140) and common electrode lines (160) formed on a substrate (100). The plurality of scanning lines (120) and data lines (140) mutually define a plurality of pixel areas (200), a thin film transistor (150) is formed at the interleaved portion thereof, and a plurality of pixel electrodes (220) are formed inside the plurality of pixel areas (200). The thin film transistor array substrate further includes a patterned shield layer (180), wherein the patterned shield layer (108) is disposed under the plurality of data lines (140) in an insulated manner. The patterned shield layer (180) in the present invention can directly shield the backlight (10) and can reduce the area of the black matrix (350) on the CF substrate (300) and improve the aperture ratio.</p>
申请公布号 WO2013029262(A1) 申请公布日期 2013.03.07
申请号 WO2011CN79250 申请日期 2011.09.01
申请人 SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.;CHEN, SHYHFENG;SHIH, MINGHUNG;HE, HAIYING 发明人 CHEN, SHYHFENG;SHIH, MINGHUNG;HE, HAIYING
分类号 G02F1/1362;G02F1/1368;H01L27/02 主分类号 G02F1/1362
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