发明名称 METHOD FOR FORMING A CAPACITOR DIELECTRIC AND METHOD FOR MANUFACTURING A CAPACITOR USING THE CAPACITOR DIELECTRIC
摘要 A method for forming a capacitor dielectric includes depositing a zirconium oxide layer, performing a post-treatment on the zirconium oxide layer such that the zirconium oxide layer has a tetragonal phase, and depositing a tantalum oxide layer over the zirconium oxide layer such that the tantalum oxide layer has a tetragonal phase.
申请公布号 US2013058007(A1) 申请公布日期 2013.03.07
申请号 US201213603291 申请日期 2012.09.04
申请人 PARK JONG-BUM;HYNIX SEMICONDUCTOR INC. 发明人 PARK JONG-BUM
分类号 H01G4/10 主分类号 H01G4/10
代理机构 代理人
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