发明名称 |
METHOD FOR FABRICATING A PHOTOMASK FOR EUV LITHOGRAPHY |
摘要 |
A photomask for extreme ultraviolet (EUV) lithography includes: a substrate; a reflection layer disposed over the substrate and reflecting EUV light incident thereto; and an absorber layer pattern disposed over the reflection layer to expose a portion of the reflection layer and comprising a material having an extinction coefficient (k) to EUV radiation higher than that tantalum (Ta). |
申请公布号 |
US2013059237(A1) |
申请公布日期 |
2013.03.07 |
申请号 |
US201213651048 |
申请日期 |
2012.10.12 |
申请人 |
HYNIX SEMICONDUCTOR INC.;HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM YOUNG DAE |
分类号 |
G03F1/24 |
主分类号 |
G03F1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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