PHOTOELECTRIC CONVERSION APPARATUS

摘要

The purpose of the present invention is to improve photoelectric conversion efficiency of a photoelectric conversion apparatus. A photoelectric conversion apparatus (11) of one embodiment of the present invention is provided with: a lower electrode layer (2), which is provided on a substrate (1), and has a first lower electrode layer (2a) and a second lower electrode layer (2b) planarly disposed in one direction at an interval; a first semiconductor layer (3a), which is provided over the substrate (1) from over the first lower electrode layer (2a) to over the second lower electrode layer (2b), has a polycrystalline structure, and is of a first conductivity type; a second semiconductor layer (4a), which is formed on the first semiconductor layer (3a), and is of a second conductivity type different from the first conductivity type; and a connecting conductor (7a), which is provided along the surface of the first semiconductor layer (3a) or is provided to penetrate the first semiconductor layer (3a), and electrically connects the second semiconductor layer (4a) and the second lower electrode layer (2b). In the first semiconductor layer (3a), the average grain size of a crystal in the vicinity of a connecting section between the connecting conductor (7a) and the second lower electrode layer (2b) is larger than the average grain size of a crystal in the vicinity of the first lower electrode layer (2a).