MEMRISTOR DEVICE INCLUDING RESISTANCE RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A memristor device and a manufacturing method thereof are provided to simultaneously implement a resistor property, a memory property, and a diode property in one cell by using a schottky diode and a resistance change memory with various resistance switching properties. CONSTITUTION: A bottom electrode(200) is formed on a substrate. A resistance change semiconductor layer(300) has a resistance change memory region and a diode region. An insulation layer(500) is formed in the resistance change memory region of the resistance change semiconductor layer. A quantum dot(400) is formed in the insulation layer. A top electrode forms a metal oxide layer by reacting on the insulation layer. A metal electrode(700) is formed in the diode region of the resistance change semiconductor layer. [Reference numerals] (Circuit11) Second ReRAM; (Circuit12) Fourth ReRAM; (Circuit3) First or third ReRAM