LIGHT EMITTING DEVICE

摘要

PURPOSE: A light emitting device is provided to improve the crystallization of the final quantum well in which a recombination occurs by increasing a growth temperature of a first quantum well than a forming temperature of a general quantum well with 6 to 9 degrees centigrade. CONSTITUTION: A first conductive semiconductor layer(112) is formed on an active layer(114). A second conductive semiconductor layer(116) is formed on the active layer. The active layer includes a first quantum well(114w1) near the second conductive semiconductor layer and a second quantum well(114w2) near the first quantum well. An electron-hole recombination rate of the second quantum well is higher than the electron-hole recombination rate of the first quantum well. An electron blocking layer(130) is formed between the active layer and the second conductive semiconductor layer.