发明名称 |
Semiconductor light emitting device |
摘要 |
<p>A semiconductor light emitting device includes a semiconductor structure (11), a transparent electrically-conducting layer (13), a dielectric film (4), and a metal reflecting layer (22). The semiconductor structure (11) includes an active region (8). The transparent electrically-conducting layer (13) is formed on the upper surface of the semiconductor structure (11). The dielectric film (4) is formed on the upper surface of the transparent electrically-conducting layer (13). The metal reflecting layer (22) is formed on the upper surface of the dielectric film (4). The dielectric film (4) has at least one opening (21) whereby partially exposing the transparent electrically-conducting layer (13). The transparent electrically-conducting layer (13) is electrically connected to the metal reflecting layer (22) through the opening (21). A barrier layer (24) is partially formed and covers the opening (21) so that the barrier layer (24) is interposed between the transparent electrically-conducting layer (13) and the metal reflecting layer (22).</p> |
申请公布号 |
EP2565944(A2) |
申请公布日期 |
2013.03.06 |
申请号 |
EP20120182595 |
申请日期 |
2012.08.31 |
申请人 |
NICHIA CORPORATION |
发明人 |
KUSUSE, TAKESHI;AZUMA, NAOKI;OGAWA, TOSHIAKI;KASAI, HISASHI |
分类号 |
H01L33/40 |
主分类号 |
H01L33/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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