| 摘要 |
PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve external quantum efficiency of a device by forming a transparent electrode in a trench of a semiconductor layer in a light emitting cell. CONSTITUTION: An active layer(50) is interposed between an N type semiconductor layer and a P type semiconductor layer. A pattern is formed on the surface of the P type semiconductor layer. A transparent electrode layer(70) is formed on the P type semiconductor layer along the pattern. A P type bonding pad is formed on the transparent electrode layer. The P type bonding pad includes a lower surface corresponding to the transparent electrode layer. |
