发明名称 |
ETHCING APPARATUS FOR ANALYZING SAPPHIRE WITH LARGE DIAMETER |
摘要 |
PURPOSE: An etching device for analyzing a large-sized sapphire is provided to obtain the etching device for an EDP(Electronic Data Processing) measurement optimized for the sapphire and to etch a plurality of the large-sized sapphires at one time. CONSTITUTION: An etching device for analyzing a large-sized sapphire comprises a housing unit(1), an etching chamber(2), a temperature control unit(3), a heating unit, and a wafer cassette. The etching chamber accommodates etching solution, forms an internal space to dip the sapphire into the etching solution, and has an opening on the top surface. The temperature control unit is installed inside the housing unit, thereby being installed outside of the etching chamber. The wafer cassette includes a plurality of slots for loading a plurality of sapphire wafers and is inserted into the etching chamber.
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申请公布号 |
KR20130022024(A) |
申请公布日期 |
2013.03.06 |
申请号 |
KR20110084664 |
申请日期 |
2011.08.24 |
申请人 |
BI EMT CO., LTD.;BIAM CO., LTD. |
发明人 |
PARK, JONG IN;OH, EUNG SE;LEE, JONG CHAN |
分类号 |
G01N1/32;G01N21/87 |
主分类号 |
G01N1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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