Cadmium Sulfide Layers for Use in Cadmium Telluride Based Thin Film Photovoltaic Devices and Methods of their Manufacture

摘要

Cadmium telluride thin film photovoltaic devices 10 are generally provided. The device 10 can include a substrate 12, a transparent conductive oxide layer 14 on the substrate 12; a resistive transparent buffer layer 16 on the transparent conductive oxide layer 14; a cadmium sulfide layer 18 on the resistive transparent buffer layer 16; a cadmium telluride layer 20 on the cadmium sulfide layer 18; and, a back contact layer 22 on the cadmium telluride layer 20. The cadmium sulfide layer 18 can include oxygen in a molar percentage greater than 0 % to about 20 %. In one particular embodiment, a second cadmium sulfide layer 19 substantially free from oxygen can be positioned between the cadmium sulfide layer 18 and the cadmium telluride layer 20. Methods of depositing a cadmium sulfide layer 18 on a substrate 12 and methods of manufacturing a cadmium telluride thin film photovoltaic device 10 are also generally provided.