METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a leakage current on an interface by forming an epitaxial layer between an active region and a bottom electrode of a capacitor. CONSTITUTION: A bit line(170) is formed on a substrate(110) including an active region(114). An interlayer dielectric layer is formed on the substrate to cover the bit line. A first hole(1H) passing through the interlayer dielectric layer is formed in the active region. A dummy contact layer is formed by filing the first hole. A mold layer is formed on the interlayer dielectric layer and the dummy contact layer. A second hole(2H) passing through the mold layer is formed on the dummy contact layer. An epitaxial layer(140) is formed in the active region exposed from the bottom of the first hole. A bottom electrode(152) is formed in the inner wall of the first hole and the second hole.