NITRIDE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A nitride semiconductor device is provided to improve luminous efficiency by increasing the density of holes inputted to an active layer. CONSTITUTION: An active layer is formed between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer(106). The active layer is formed by alternatively laminating a quantum well layer(103b) and a quantum barrier layer(103a). An electron blocking layer(105) is formed between the active layer and the p-type nitride semiconductor layer. A hole collector layer is formed between the active layer and the electron blocking layer and includes a first layer(104a) and a second layer(104b) with higher bandgap energy than the bandgap energy of the quantum well layer. The first layer and the second layer are alternatively laminated.