发明名称 |
LOW RESISTANCE CONDUCTIVE LINE, THIN FILM TRANSISTOR, THIN FILM TRANSISTOR PANEL AND METHOD OF MANUFACTURING THE SAME |
摘要 |
<p>PURPOSE: A low resistance wire, a thin film transistor, a thin film transistor display plate, and manufacturing methods thereof are provided to prevent discoloration of a source electrode and a drain electrode due to reaction with oxygen or sulfur in a protection layer etching process by forming a capping layer with large density. CONSTITUTION: A source electrode(173) faces a drain electrode(175) on a substrate(110). A capping layer(179) is formed on the sidewall and surfaces of the source electrode and the drain electrode. A protection layer(180) is formed on the source electrode and the drain electrode. A contact hole passes through the protection layer and a gate insulation layer(124). A pixel electrode is electrically connected to the drain electrode through the contact hole.</p> |
申请公布号 |
KR20130021607(A) |
申请公布日期 |
2013.03.06 |
申请号 |
KR20110083971 |
申请日期 |
2011.08.23 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
CHOI, SHIN IL;RYU, YONG HWAN;PARK, HONG SICK;CHOI, SEUNG HA |
分类号 |
H01L29/786;H01L21/28;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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