PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION DEVICE, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT

摘要

[Problem] In the case of further stacking a window layer or the like on a buffer layer, the buffer layer and the light absorption layer are likely to be damaged during the formation of the window layer due to inferior moisture resistance and plasma resistance, and photoelectric conversion elements sometimes fail to achieve any satisfactory conversion efficiency in terms of reliability. [Solving Means] Provided is a photoelectric conversion element including: a light absorption layer containing a I-B group element, a III-B group element, and a VI-B group element, which is provided on a lower electrode layer; a first semiconductor layer containing a III-B group element and a VI-B group element, which is provided on the light absorption layer; and a second semiconductor layer containing an oxide of a II-B group element, which is provided on the first semiconductor layer, wherein the light absorption layer comprises a doped layer region containing the II-B group element, on the first semiconductor layer side.