| 摘要 |
<p>PURPOSE: An organic light emitting display device is provided to prevent stress and deterioration due to an interfacial instability between an organic material and an inorganic material by forming a doping layer in an organic light emitting layer of an organic light emitting diode using P-type semiconductor materials. CONSTITUTION: An organic light emitting diode is formed on a substrate with a thin film transistor and includes a first electrode(332), a hole transport layer(401), an organic light emitting layer, an electron transport layer, and a second electrode(333). A doping layer(501,502) doped with P-type semiconductor materials is formed on the hole transport layer. A doping density of the P-type semiconductor materials doped on the doping layer is 0.1 to 35%. An auxiliary hole transport layer(402,403) is formed between the organic light emitting layer and the hole transport layer. [Reference numerals] (AA,CC,EE) Cathode; (BB,DD,FF) Anode</p> |
