发明名称 METHOD FOR MANUFACTURING (INDIUM, GALLIUM, ZINC, OXIDE TARGET AND INDIUM, GALLIUM, ZINC, OXIDE TARGET BY USING THE SAME
摘要 PURPOSE: An IGZO(Indium, Gallium, Zinc, Oxide) target manufacturing method and an IGZO target thereby are provided to maximize the time for using a target by including a smaller generation of the nozzle in comparison to the target in which In-Zn-O composition and ZnGa2O4 composition are separated by generating InGaZnO4 single phase. CONSTITUTION: An IGZO target manufacturing method comprises a process(S110) of dispersing after mixing Indium oxide powder, gallium oxide powder, and zinc oxide powder with dispersant; and a process(S120) of sintering after manufacturing green compact by mixing the dispersed indium oxide powder, the dispersed gallium oxide powder, and the dispersed zinc oxide powder. A dispersion process comprises a first dispersion step preparing indium oxide by mixing the indium oxide powder and a first dispersant; a second dispersion step preparing gallium oxide dispersed liquid by mixing the gallium oxide powder and a second dispersant; a third dispersion step preparing zinc oxide dispersed liquid by mixing the zinc oxide powder and a third dispersant. Dispersion is implemented with wet milling. The first dispersant adds polyacrylic acid amine salt of 500 molecular weight in comparison with indium oxide powder 100 parts by weight in order to be 1.0 parts by weight. [Reference numerals] (AA) Start; (BB) End; (S110) Dispersion process; (S120) Sintering process
申请公布号 KR20130021621(A) 申请公布日期 2013.03.06
申请号 KR20110083994 申请日期 2011.08.23
申请人 SAMSUNG CORNING PRECISION MATERIALS CO., LTD. 发明人 YOU, YIL HWAN;LEE, HYUNG ROK;KIM, DONG JO;YU, TAE HWAN;JUNG, SANG CHEOL
分类号 C23C14/34;C04B35/00;C23C14/08 主分类号 C23C14/34
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