发明名称 Thin film transistor array panel and method for manufacturing the same
摘要 A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.
申请公布号 US8389998(B2) 申请公布日期 2013.03.05
申请号 US201213444768 申请日期 2012.04.11
申请人 LEE YOUNG-WOOK;YOO HONG-SUK;SONG JEAN-HO;YOUN JAE-HYOUNG;LEE WOO-GEUN;KIM KI-WON;KIM JONG-IN;SAMSUNG DISPLAY CO., LTD. 发明人 LEE YOUNG-WOOK;YOO HONG-SUK;SONG JEAN-HO;YOUN JAE-HYOUNG;LEE WOO-GEUN;KIM KI-WON;KIM JONG-IN
分类号 H01L27/14 主分类号 H01L27/14
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