发明名称 Light emitting device and method of manufacturing the same
摘要 There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.
申请公布号 US8390002(B2) 申请公布日期 2013.03.05
申请号 US20080251735 申请日期 2008.10.15
申请人 KIM CHANG YEON;YOON YEO JIN;SEOUL OPTO DEVICE CO., LTD. 发明人 KIM CHANG YEON;YOON YEO JIN
分类号 H01L27/15;H01L33/06;H01L33/32;H01L33/42 主分类号 H01L27/15
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