发明名称 |
Light emitting device and method of manufacturing the same |
摘要 |
There are provided a light emitting device and a method of manufacturing the same. A light emitting device according to the present invention includes a substrate; an N-type semiconductor layer, an active layer and a P-type semiconductor layer, sequentially formed on the substrate; one or more trenches formed to expose the N-type semiconductor layer by partially removing at least the P-type semiconductor and active layers; a first insulating layer formed on sidewalls of the trenches; and a conductive layer filled in the trenches having the first insulating layer formed therein. According to the present invention, it is possible to obtain a characteristic of uniform current diffusion, and thus, light is uniformly emitted to thereby enhance the light emitting efficiency.
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申请公布号 |
US8390002(B2) |
申请公布日期 |
2013.03.05 |
申请号 |
US20080251735 |
申请日期 |
2008.10.15 |
申请人 |
KIM CHANG YEON;YOON YEO JIN;SEOUL OPTO DEVICE CO., LTD. |
发明人 |
KIM CHANG YEON;YOON YEO JIN |
分类号 |
H01L27/15;H01L33/06;H01L33/32;H01L33/42 |
主分类号 |
H01L27/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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